Titlebook: Integrated Nanoelectronics; Nanoscale CMOS, Post Vinod Kumar Khanna Book 2016 Springer India 2016 Nano-scale Engineering Applications.Nanob

復(fù)雜

書目名稱Integrated Nanoelectronics影響因子(影響力)




書目名稱Integrated Nanoelectronics影響因子(影響力)學(xué)科排名




書目名稱Integrated Nanoelectronics網(wǎng)絡(luò)公開度




書目名稱Integrated Nanoelectronics網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Integrated Nanoelectronics被引頻次




書目名稱Integrated Nanoelectronics被引頻次學(xué)科排名




書目名稱Integrated Nanoelectronics年度引用




書目名稱Integrated Nanoelectronics年度引用學(xué)科排名




書目名稱Integrated Nanoelectronics讀者反饋




書目名稱Integrated Nanoelectronics讀者反饋學(xué)科排名

昆蟲

TEM

Nanomaterials and Their Propertiesan Commission (EC) concerning nanomaterials is described. Ultrafine grained materials with grain size in nanoscale range show unusually higher mechanical strength than coarse-grained materials. Two vital characterizing parameters representing the degree of dominance of surface effects in materials a

憤怒事實

Downscaling Classical MOSFETevices combined into the well-known CMOS configuration has been constantly downscaled. Riding on the classical MOSFET workhorse, integrated circuits have steadily marched a long way towards the nanoscale. Constant field and constant voltage scaling schemes have been applied. The downscaling succeede

Watemelon

incite

SOI-MOSFETsSFET structures were direly needed in order that the pace of the progress is not slackened. It was also evident that short-channel effects could only be obviated if the gate action could be strengthened so that the channel region is always under the solitary control of the gate. The advent of silico

LAVA

Trigate FETs and FINFETsitecture. The changeover to SOI-MOSFET, particularly the FD-SOI-MOSFET, succeeded to a large extent in meeting the challenges without any fundamental modification of the structure. Alternative choices proposed were trigate FET and FINFET structures, which marked the end of planar era and entailed a

本土

membrane

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