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Titlebook: Insulating Films on Semiconductors; Proceedings of the S Max J. Schulz,Gerhard Pensl Conference proceedings 1981 Springer-Verlag Berlin Hei

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書(shū)目名稱(chēng)Insulating Films on Semiconductors
副標(biāo)題Proceedings of the S
編輯Max J. Schulz,Gerhard Pensl
視頻videohttp://file.papertrans.cn/469/468167/468167.mp4
叢書(shū)名稱(chēng)Springer Series in Electronics and Photonics
圖書(shū)封面Titlebook: Insulating Films on Semiconductors; Proceedings of the S Max J. Schulz,Gerhard Pensl Conference proceedings 1981 Springer-Verlag Berlin Hei
描述The INFOS 81 Conference on Insulating Films on Semiconductors was held at the University of Erlangen-NUrnberg in Erlangen from 27 to 29 April 1981. This conference was a sequel to the first conference INFOS 79 held in Durham. INFOS 81 attracted 170 participants from universities, research institutes and industry. Attendants were registered from 15 nations. The biannual topical conference series will be continued by INFOS 83 to be held in Eindhoven, The Netherlands, in April 1983. The conference proceedings include all the invited (Y) and contrlDUtea (42) papers presented at the meeting. The topics range from the basic physical understanding of the properties of insulating films and their interface to semiconductors to the discussion of stability and dielectric strength as well as growing and deposition techniques which are relevant for technical applications. Strong emphasis was given to the semiconductor silicon and its native oxide; however, sessions on compound semiconductors and other insulating films also raised strong interest. The proceedings survey the present state of our understanding of the system of insulating films on semiconductors. As a new aspect of the topic, the p
出版日期Conference proceedings 1981
關(guān)鍵詞Halbleiter; Isolierende dünne Schicht; laser; semiconductor; silicon; thin films
版次1
doihttps://doi.org/10.1007/978-3-642-68247-6
isbn_softcover978-3-642-68249-0
isbn_ebook978-3-642-68247-6Series ISSN 0172-5734
issn_series 0172-5734
copyrightSpringer-Verlag Berlin Heidelberg 1981
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A Study of MIS Structures Prepared Under Ultra-High-Vacuum ConditionsIn present semiconductor device technology (MIS, MISS …) the Si-SiO. interface is a vital part. The realization of very thin and pure oxide films (less than 30 ? for some applications) is very difficult to control under classical ways due to
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Electrical Properties of Ultrathin Oxide Layers Formed by DC Plasma AnodizationIt appears that insufficient control over the ultrathin (25–50 ?) oxides growth process and stability still limits the further development of MIS tunnel devices such as solar cells, various transistor structures, and switching devices.
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Influence of Different Technologies of Metal Deposition and of Oxide Growth on the Electronic ProperWe study the influence of different technological processes on the electronic properties of the Si-SiO. interface of Al-SiO.-Si (N-type) MIS tunnel diodes. I(V) (in darkness or under illumination) and C(V), G(V) characteristics (100 Hz ≤ f ≤ 1 MHz) are plotted and analysed.
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