Titlebook: Insulating Films on Semiconductors; Proceedings of the S Max J. Schulz,Gerhard Pensl Conference proceedings 1981 Springer-Verlag Berlin Hei

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書目名稱Insulating Films on Semiconductors影響因子(影響力)




書目名稱Insulating Films on Semiconductors影響因子(影響力)學(xué)科排名




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書目名稱Insulating Films on Semiconductors讀者反饋學(xué)科排名

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A Study of MIS Structures Prepared Under Ultra-High-Vacuum ConditionsIn present semiconductor device technology (MIS, MISS …) the Si-SiO. interface is a vital part. The realization of very thin and pure oxide films (less than 30 ? for some applications) is very difficult to control under classical ways due to

高度

Electrical Properties of Ultrathin Oxide Layers Formed by DC Plasma AnodizationIt appears that insufficient control over the ultrathin (25–50 ?) oxides growth process and stability still limits the further development of MIS tunnel devices such as solar cells, various transistor structures, and switching devices.

木質(zhì)

Influence of Different Technologies of Metal Deposition and of Oxide Growth on the Electronic ProperWe study the influence of different technological processes on the electronic properties of the Si-SiO. interface of Al-SiO.-Si (N-type) MIS tunnel diodes. I(V) (in darkness or under illumination) and C(V), G(V) characteristics (100 Hz ≤ f ≤ 1 MHz) are plotted and analysed.

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Photoelectric Methods as a Tool for the Analysis of Current Flow Mechanism in MIS Tunnel DiodesIn Fig. 1 the energy band diagram of the illuminated MIS tunnel diode is shown.

Organization