Titlebook: High-Speed Electronics; Basic Physical Pheno Bengt K?llb?ck,Heinz Beneking Conference proceedings 1986 Springer-Verlag Berlin Heidelberg 19

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Three Picosecond Oscillations in Avalanche Electron-Hole Plasma Induced by Energy Relaxation Phenometion has been paid to high-field range (typically 500 kv/cm), for which Impact Ionization is observed /2/–/4/. We have recently found from numerical simulation of non-stationary high-field carrier transport that submicron GaAs p-i-n diodes show high-frequency coherent instabilities in the particle c

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Resonant Tunneling Transistors, Tunneling Superlattice Devices and New Quantum Well Avalanche PhotodT) bipolar transistor; infrared lasers and detectors based on sequential RT; avalanche photodiodes (APDs) and solid-state photomultipliers based on the recently discovered impact ionization across the band-edge discontinuity. The last section discusses the high speed operation of 1.3–1.6 .m QW APDs.

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Hot-Carrier-Excited Two-Dimensional Plasmon in Selectively Doped AlGaAs/GaAs Heterointerface Under Hfrom the grating-coupled 2D-plasmon grew up to 30[μW/cm.] for the applied field of 760[V/cm]. The other related subjects such as the real-space transfer and 2D electron temperature are also demonstrated.

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Optical High-Field-Transport Experiments in GaAs Quantum Wellsrs. We will discuss (1) a measurement of the drift velocity of minority carriers in GaAs quantum wells by a timeof-flight technique, (2) a simultaneous measurement of the luminescence spectra which allows us to determine the carrier distribution function and investigate the energy exchange rate betw

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