找回密碼
 To register

QQ登錄

只需一步,快速開(kāi)始

掃一掃,訪(fǎng)問(wèn)微社區(qū)

打印 上一主題 下一主題

Titlebook: High-Speed Electronics; Basic Physical Pheno Bengt K?llb?ck,Heinz Beneking Conference proceedings 1986 Springer-Verlag Berlin Heidelberg 19

[復(fù)制鏈接]
樓主: Ensign
21#
發(fā)表于 2025-3-25 06:00:35 | 只看該作者
H. Hillmer,G. Mayer,A. Forchel,K. S. L?chner,E. Bauser in Deutschland und in den Vereinigten Staaten verschieden. In Deutschland konnte ich Tausende und Abertausende von Zeitungsnummern, Hunderte von Jahresberichten von Gewerbegerichten und Gewerkschaftskartellen u. a. m. im Laufe der Jahre, die ich auf diese Untersuchung verwendete, in Mu?e durcharbei
22#
發(fā)表于 2025-3-25 10:27:50 | 只看該作者
23#
發(fā)表于 2025-3-25 12:18:00 | 只看該作者
24#
發(fā)表于 2025-3-25 17:21:19 | 只看該作者
25#
發(fā)表于 2025-3-25 21:51:17 | 只看該作者
Resonant Tunneling Transistors, Tunneling Superlattice Devices and New Quantum Well Avalanche PhotodT) bipolar transistor; infrared lasers and detectors based on sequential RT; avalanche photodiodes (APDs) and solid-state photomultipliers based on the recently discovered impact ionization across the band-edge discontinuity. The last section discusses the high speed operation of 1.3–1.6 .m QW APDs.
26#
發(fā)表于 2025-3-26 01:58:23 | 只看該作者
Transport Characteristics in Heterostructure Devicesnd the resonant-tunneling hot electron transistor (RHET). This is followed by a discussion of transport characteristics in the RHET, with special attention given to the resonant tunneling barrier (RTB) used as the emitter barrier of the RHET.
27#
發(fā)表于 2025-3-26 04:48:13 | 只看該作者
Hot-Carrier-Excited Two-Dimensional Plasmon in Selectively Doped AlGaAs/GaAs Heterointerface Under Hfrom the grating-coupled 2D-plasmon grew up to 30[μW/cm.] for the applied field of 760[V/cm]. The other related subjects such as the real-space transfer and 2D electron temperature are also demonstrated.
28#
發(fā)表于 2025-3-26 09:27:26 | 只看該作者
An Ultra-Fast Optical Modulator: The Double-Well GaAs/GaAlAs Superlattice (DWSL)ed as the optically active part of the device where the excitonic absorption can be bleached very rapidly by an external light source. The wider wells trap the excess carriers in a very short time so that the absorption is quickly restored. All optical switches with a time response shorter than 1 ps can be made with such a system.
29#
發(fā)表于 2025-3-26 14:41:28 | 只看該作者
Springer Series in Electronics and Photonicshttp://image.papertrans.cn/h/image/426757.jpg
30#
發(fā)表于 2025-3-26 18:13:27 | 只看該作者
https://doi.org/10.1007/978-3-642-82979-6electronics; photonics; semiconductor
 關(guān)于派博傳思  派博傳思旗下網(wǎng)站  友情鏈接
派博傳思介紹 公司地理位置 論文服務(wù)流程 影響因子官網(wǎng) 吾愛(ài)論文網(wǎng) 大講堂 北京大學(xué) Oxford Uni. Harvard Uni.
發(fā)展歷史沿革 期刊點(diǎn)評(píng) 投稿經(jīng)驗(yàn)總結(jié) SCIENCEGARD IMPACTFACTOR 派博系數(shù) 清華大學(xué) Yale Uni. Stanford Uni.
QQ|Archiver|手機(jī)版|小黑屋| 派博傳思國(guó)際 ( 京公網(wǎng)安備110108008328) GMT+8, 2025-10-14 13:42
Copyright © 2001-2015 派博傳思   京公網(wǎng)安備110108008328 版權(quán)所有 All rights reserved
快速回復(fù) 返回頂部 返回列表
固始县| 白朗县| 枣阳市| 祁阳县| 巴里| 房产| 广宁县| 龙胜| 弥勒县| 通许县| 铁岭县| 时尚| 大洼县| 叙永县| 苍南县| 邳州市| 阿拉善盟| 多伦县| 清镇市| 新泰市| 襄汾县| 绵竹市| 太保市| 霍山县| 洛川县| 木兰县| 怀集县| 古蔺县| 扎赉特旗| 思茅市| 沁源县| 金乡县| 衡水市| 高密市| 陇南市| 福清市| 剑河县| 从江县| 石泉县| 永年县| 翁牛特旗|