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書目名稱Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets影響因子(影響力)




書目名稱Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets影響因子(影響力)學(xué)科排名




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書目名稱Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets被引頻次




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書目名稱Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets讀者反饋




書目名稱Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets讀者反饋學(xué)科排名

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Politics and the History CurriculumIn this chapter, the scavenging concept is analyzed. As it was commented in the introduction, Kim et al. [1] explored this effect for the first time with the aim of reducing the SiO. layer that growth at the high κ/silicon interface.

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Introduction,The integrated circuits (ICs) based on complementary metal-oxide-semiconductor (CMOS) devices are currently the dominant technology in the microelectronic industry. Its success is based on the low static power consumption and its high integration density.

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Characterization Techniques,The study of the semiconductor/high κ interface and the properties of the dielectric film, grown using the fabrication techniques described in the former chapter, are one of the main objectives of this thesis.