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Thermal Oxidation of Gd2O3,A straightforward method to deposit gadolinium oxide is reactive sputtering from a metallic Gd target using a mixed Ar/O. atmosphere. The drawback of this approach is that the highly reactive excited oxygen molecules presented in the plasma can oxidize the substrate during the first stages of dielectric growth.

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Gadolinium Scandate,Obtaining a high κ film of Gd.Sc.O. by means of HPS from metallic Gd and Sc targets was one of the main objectives of this thesis and it is analyzed in this chapter.

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Interface Scavenging,In this chapter, the scavenging concept is analyzed. As it was commented in the introduction, Kim et al. [1] explored this effect for the first time with the aim of reducing the SiO. layer that growth at the high κ/silicon interface.

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https://doi.org/10.1007/978-1-4039-3842-8and the substrate. These reduced the effective permittivity, as it was pointed out in the former chapter. Thus, the study of other alternatives is mandatory in order to obtain, with HPS, a high κ dielectric with good performance from metallic targets.

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Religion and Youth in the Soviet Union, InP substrates. The novelty of this work consists on the dielectric deposition process. A two-step procedure was developed: first, metallic thin films of Gd, Sc and a nanolaminate of them were deposited by means of high pressure sputtering, a non-conventional technique, in an Ar atmosphere from metallic targets.

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Conclusions and Future Work, InP substrates. The novelty of this work consists on the dielectric deposition process. A two-step procedure was developed: first, metallic thin films of Gd, Sc and a nanolaminate of them were deposited by means of high pressure sputtering, a non-conventional technique, in an Ar atmosphere from metallic targets.

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Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets978-3-319-66607-5Series ISSN 2190-5053 Series E-ISSN 2190-5061

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Plasma Oxidation of Gd2O3 and Sc2O3,and the substrate. These reduced the effective permittivity, as it was pointed out in the former chapter. Thus, the study of other alternatives is mandatory in order to obtain, with HPS, a high κ dielectric with good performance from metallic targets.