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Titlebook: Generation, Detection and Processing of Terahertz Signals; Aritra Acharyya,Arindam Biswas,Palash Das Book 2022 The Editor(s) (if applicabl

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樓主: endocarditis
31#
發(fā)表于 2025-3-26 21:14:36 | 只看該作者
Psychobiological Aspects of Life Stress,l single-drift (SD) IMPATT sources. This model is suitable for both sub-terahertz frequency and terahertz (THz) frequency of operation of the device. The details of the model are presented in this chapter; however, the simulation results are omitted from here due to the limitations in availability o
32#
發(fā)表于 2025-3-27 02:13:46 | 只看該作者
33#
發(fā)表于 2025-3-27 06:57:49 | 只看該作者
34#
發(fā)表于 2025-3-27 13:02:57 | 只看該作者
Coping with COVID-19: The WeChat WayTHz) power. Avalanche transit time (ATT) sources based on GaAs~Al.Ga.As, Si~3C-SiC and GaN~Al.Ga.N heterojunctions are simulated, and their performances are compared at a wide range of frequency spectrum. Out of those potential heterostructures, GaN~Al.Ga.N is found to be most suitable one for reali
35#
發(fā)表于 2025-3-27 13:40:10 | 只看該作者
https://doi.org/10.1007/978-94-009-4243-1ahertz (THz) frequency spectrum are described in this chapter. Current mechanism of Si~3C-SiC heterojunctions has been discussed concisely. Applications of this heterostructure in different areas of electronics and optoelectronics like microelectromechanical systems (MEMS), energy conversion, photod
36#
發(fā)表于 2025-3-27 21:18:36 | 只看該作者
Coping with Caveats in Coalition Warfarehene nanoribbon field effect transistor (DG-TM-TGNFET) has been reported in this chapter. The novel heterojunction-based TFET structure with ultra-thin graphene nanoribbon placed over silicon channel has produced better digital and analog/RF performance, by means of which the proposed device can be
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發(fā)表于 2025-3-28 00:49:17 | 只看該作者
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發(fā)表于 2025-3-28 05:31:47 | 只看該作者
39#
發(fā)表于 2025-3-28 10:04:43 | 只看該作者
978-981-16-4949-3The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Singapor
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發(fā)表于 2025-3-28 13:37:23 | 只看該作者
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