Titlebook: Generation, Detection and Processing of Terahertz Signals; Aritra Acharyya,Arindam Biswas,Palash Das Book 2022 The Editor(s) (if applicabl

CAND

An Approximate Model for Analyzing Four-Terminal Lateral Single-Drift IMPATT-Based THz Radiators,l single-drift (SD) IMPATT sources. This model is suitable for both sub-terahertz frequency and terahertz (THz) frequency of operation of the device. The details of the model are presented in this chapter; however, the simulation results are omitted from here due to the limitations in availability o

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On Some Modern Simulation Techniques for Studying THz ATT Sources,capability at the design spectrum before actual fabrication. Design and simulation of complex devices like THz avalanche transit time (ATT) diodes require comprehensive and accurate simulation model for small-signal, large-signal and noise simulation before the actual fabrication. This chapter is de

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Search of a Suitable Heterojunction Material System for Terahertz Wave Generation,THz) power. Avalanche transit time (ATT) sources based on GaAs~Al.Ga.As, Si~3C-SiC and GaN~Al.Ga.N heterojunctions are simulated, and their performances are compared at a wide range of frequency spectrum. Out of those potential heterostructures, GaN~Al.Ga.N is found to be most suitable one for reali

暗指

Applications of Si~3C-SiC Heterostructures in High-Frequency Electronics up to the Terahertz Spectrahertz (THz) frequency spectrum are described in this chapter. Current mechanism of Si~3C-SiC heterojunctions has been discussed concisely. Applications of this heterostructure in different areas of electronics and optoelectronics like microelectromechanical systems (MEMS), energy conversion, photod

BILK

Novel InAs/Si Heterojunction Dual-Gate Triple Metal P-i-N Tunneling Graphene Nanoribbon Field Effechene nanoribbon field effect transistor (DG-TM-TGNFET) has been reported in this chapter. The novel heterojunction-based TFET structure with ultra-thin graphene nanoribbon placed over silicon channel has produced better digital and analog/RF performance, by means of which the proposed device can be

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LURE

https://doi.org/10.1007/978-3-662-07506-7of prospective applications of THz signals as well as some state-of-the-art electronic and photonic devices have also been included in this chapter. A chapter-wise overview of the entire book has been incorporated at the end of this introductory chapter.

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https://doi.org/10.1007/978-981-19-2711-9e intraband transition from ground to first excited state. Peak values of absorption cross section are noted which reflects active area for optical transitions has dimensions in sub-micron range. Structural parameters are varied to compute the possible variation of that cross section, taking into ac