Titlebook: Gate Dielectrics and MOS ULSIs; Principles, Technolo Takashi Hori Book 1997 Springer-Verlag Berlin Heidelberg 1997 LSI.MIS.MOS.dielectrics.

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0172-5734 rided oxides from this first book presenting them in detail .Gate Dielectrics and MOS ULSIs .provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior qu

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合乎習(xí)俗

auxiliary

Thermally Nitrided Oxides: ,,4+ 16 Mbit samples to mass production. Some of them, especially in Japan, rushed to replace thermal gate-SiO{2in}, with nitrided oxides [5.1]. This may mean the first event since the birth of MOS devices [5.2] in 1960, from the standpoint that MIS products actually use a silicon-dielectric interface other than the conventional Si-SiO. interface.

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Book 1997e dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integration. And since the quality requirements are rather different between device applications, they are selected in an applicatipn-oriented manner, e.g.,

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MIS Structure,and gate dielectrics [2.1-3]. In this chapter, we shall consider MIS theory and its applications. In most cases, a p-type semiconductor will be taken as an example, since it is employed in n-channel MOSFETs.

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