Titlebook: Gate Dielectrics and MOS ULSIs; Principles, Technolo Takashi Hori Book 1997 Springer-Verlag Berlin Heidelberg 1997 LSI.MIS.MOS.dielectrics.

鐵砧

委派

0172-5734 ether with abundant illustrations will take even the inexperienced reader up to the present high state of the art. It is the first book presenting nitrided gate oxides in detail.978-3-642-60856-8Series ISSN 0172-5734

BUCK

Introduction,r ULSls. Unfortunately, semiconductors such as GaAs other than silicon cannot realize acceptable MISFETs due to the lack of a stable semiconductor-insulator interface in spite of innumerable attempts, the difficulty of which, in fact, was also encountered in the early development of the silicon semi

名義上

Introduction,n (.: ≥ 107 transistors on a chip) circuits such as microprocessors and semiconductor memories. As the name implies, the MIS transistor consists of a semiconductor substrate and a top gate electrode, between which an insulating .. of thickness d is formed (Fig. 1.1). Source and drain junctions are f

強(qiáng)制令

MIS Structure,IS transistor (Fig. 1.1), the MIS capacitor has only two terminals, and is the simplest and most useful device in the study of semiconductor surfaces and gate dielectrics [2.1-3]. In this chapter, we shall consider MIS theory and its applications. In most cases, a p-type semiconductor will be taken

Ingrained

Thermally Nitrided Oxides: ,,irements on the quality, especially the reliability, become more and more severe. Most of all, flash memories demand a dielectric more reliable than the conventional Si02 with its poor interface stability. This is because dielectric reliability issues are vital for them, as described in Chap. 1 and

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