Titlebook: Gas Source Molecular Beam Epitaxy; Growth and Propertie Morton B. Panish,Henryk Temkin Book 1993 Springer-Verlag Berlin Heidelberg 1993 che

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https://doi.org/10.1007/978-3-322-88570-8 there are a variety of these sources that may occupy interchangeable positions in an MBE growth chamber, and since they may be considered to be the most critical and characteristic part of the MBE system, we have chosen to devote a separate chapter to a description of their properties.

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Introduction,terials. This parallel development has resulted from the fact that precision epitaxial growth methods have provided new degrees of freedom for the basic researcher and the semiconductor device developer who, in return, have provided the motivation for support of the development of more sophisticated epitaxy methods.

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The Generation of Atomic and Molecular Beams for Elemental and Gas Source Molecular Beam Epitaxy, there are a variety of these sources that may occupy interchangeable positions in an MBE growth chamber, and since they may be considered to be the most critical and characteristic part of the MBE system, we have chosen to devote a separate chapter to a description of their properties.

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