Titlebook: Gas Source Molecular Beam Epitaxy; Growth and Propertie Morton B. Panish,Henryk Temkin Book 1993 Springer-Verlag Berlin Heidelberg 1993 che

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書目名稱Gas Source Molecular Beam Epitaxy影響因子(影響力)




書目名稱Gas Source Molecular Beam Epitaxy影響因子(影響力)學(xué)科排名




書目名稱Gas Source Molecular Beam Epitaxy網(wǎng)絡(luò)公開度




書目名稱Gas Source Molecular Beam Epitaxy網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Gas Source Molecular Beam Epitaxy被引頻次




書目名稱Gas Source Molecular Beam Epitaxy被引頻次學(xué)科排名




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書目名稱Gas Source Molecular Beam Epitaxy年度引用學(xué)科排名




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書目名稱Gas Source Molecular Beam Epitaxy讀者反饋學(xué)科排名

催眠藥

https://doi.org/10.1007/978-3-662-40377-8 type. While at high temperatures thermionic emission over barriers and phonon assisted tunneling may be dominant, at low temperatures carriers must tunnel through the barriers. The tunneling transport rates vary greatly with the carrier effective mass and thus very different mobilities are observed

Peak-Bone-Mass

milligram

,Thoraxuntersuchung in Rückenlage (E/III),for lateral dimensions of less than 0.1 μm. This is still about a factor of four larger than the dimension needed to reach the regime of two-dimensional quantization. An added consideration is the condition of the surface, which has a large effect on the electrical and optical properties of small st

SCORE

BACLE

BACLE

Optoelectronic Devices,today: zero dispersion at λ = 1.3 μm and minimum loss at λ = 1.55 μm [10.4,5]. Finally, even the very early lasers fabricated from GaInAs/InP turned out to be very reliable [10.6–8]. By 1979 their reliability matched that of the much older and then more established GaAs/AlGaAs lasers [10.9]. Today,

濃縮

CHOKE

alabaster

Optical Properties of Quantum Wells,e discussion of the optical properties of Ga.In.As.P. quantum wells we shall rely primarily on the results obtained on the structures grown by HSMBE with which we are most familiar. However, notable examples of the work carried out on structures grown by MOMBE and MOCVD [7.2–4] will also be discussed.