Titlebook: GaAs Devices and Circuits; Michael Shur Book 1987 Springer Science+Business Media New York 1987 Modulation.integrated circuit.logic.modeli

AGGER

GaAs Digital Integrated Circuits, based on self-aligned GaAs MESFETs [124] at 300 K and of 11.6 ps at 300 K [200, 201] and 5.8 ps at 77 K [73] for logic based on modulation doped AlGaAs-GaAs transistors (also called HEMTs) have been achieved, making GaAs circuits the fastest solid state circuits. Circuits as complicated as 16 x 16

Countermand

貝雷帽

Immunoglobulin

A Self-Help Guide to Managing DepressionAccording to the Bloch theorem a one-electron wave function in a crystal is of the form . where ... is a function with the same spatial periodicity as the crystal lattice. The wave functions .. are found from the solution of the Schr?dinger equation: . where . is the crystal potential, . is the wave vector, and . is the electron energy.

FAWN

Digest

cravat

abstemious

Band Structure and Transport Properties,According to the Bloch theorem a one-electron wave function in a crystal is of the form . where ... is a function with the same spatial periodicity as the crystal lattice. The wave functions .. are found from the solution of the Schr?dinger equation: . where . is the crystal potential, . is the wave vector, and . is the electron energy.

BILK

DOLT

Novel GaAs Devices,As the dimensions of GaAs devices shrink, the effective electron velocity should increase, leading to a shorter transit time and to a ballistic or near-ballistic mode of operation (see Chapter 2). At the same time the power consumption drops as a consequence of smaller device dimensions.