Titlebook: GaAs Devices and Circuits; Michael Shur Book 1987 Springer Science+Business Media New York 1987 Modulation.integrated circuit.logic.modeli

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Book 1987-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi- cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their con

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colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi- cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their con978-1-4899-1991-5978-1-4899-1989-2

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Equivalents of the Axiom of Choiceloped. The basic advantages of these devices include a higher electron velocity, leading to smaller transit time and faster response, and sxemi-insulating GaAs substrates, which allow one to decrease the parasitic capacitances and simplify the fabrication process.

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Modulation Doped Field Effect Transistors,ps at 77 K have been demonstrated. MODFET frequency dividers have operated at up to 10.1 GHz input frequency. A 4-kb MODFET RAM has also been fabricated. (A more detailed discussion of the MODFET IC performance may be found in Chapter 9.)