Titlebook: Evaluation of Advanced Semiconductor Materials by Electron Microscopy; David Cherns Conference proceedings 1989 Plenum Press, New York 198

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https://doi.org/10.1007/978-3-642-47975-5a local scale, on bulk inhomogeneities and on electrically active extended defects in semiconductors.. The EBIC current arises from the collection of minority carriers created by the incident electron beam which are drifted by the electric field of a Schottky diode or of a p-n junction; they have be

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https://doi.org/10.1007/978-3-662-61434-1e the only single crystal metal-semiconductor interfaces that are available. They are ideal material systems for the study of Schottky barrier height (SBH). Technologically, epitaxial metal-semiconductor structures may be an important part of the next generation vertical integration of microelectron

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,übersicht über bekannte Me?verfahren,mplitudes as small as 10. can produce detectable contrasts under optimum imaging conditions [1], much more than would be predicted on the basis of the perturbed projected potential alone. Strong dynamical scattering effects, stimulated by the bending of diffracting lattice planes, are primarily resp