Titlebook: Evaluation of Advanced Semiconductor Materials by Electron Microscopy; David Cherns Conference proceedings 1989 Plenum Press, New York 198

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Convergent Beam Electron Diffraction Studies of Defects, Strains and Composition Profiles in Semiconiconductor multilayers. It is shown that epitaxial strains in bicrystals and multilayers can be measured down to ~ 0.1% and that varying strain fields near dislocations and interfaces can be investigated with high sensitivity. It is also shown that convergent beam diffraction gives a powerful new me

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Measurement of Structure-Factor Phases by Electron Diffraction for the Study of Bonding in Non-Centrmeasure with sufficient accuracy to reveal bonding effects in crystals, since the bond charge typically represents less than 0.01% of the total charge-density. For semiconductors containing a center of symmetry for which large single crystals can be grown (such as silicon), X-ray diffraction techniq

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EDX and EELS Studies of Segregation in STEMassumed to have reached a steady-state equilibrium at a particular temperature such that the rate of capture at a sink exactly balances the rate of evaporation from the sink by thermal excitation. Subsequent rapid cooling to room temperature does not significantly alter the segregation profile. A si

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EBIC Studies of Individual Defects in Lightly Doped Semiconductors: CdTe as an Examplea local scale, on bulk inhomogeneities and on electrically active extended defects in semiconductors.. The EBIC current arises from the collection of minority carriers created by the incident electron beam which are drifted by the electric field of a Schottky diode or of a p-n junction; they have be

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Electronic Structure and Fermi Level Pinning Obtained with Spatially Resolved Electron Energy Loss Srs. In principle, electronic structure may also be obtained directly from the same areas by observing the electron energy loss scattering. Currently at IBM, the high resolution electron spectrometer on the HB501 scanning transmission electron microscope (STEM) is producing core loss spectra which sh

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