Titlebook: Evaluation of Advanced Semiconductor Materials by Electron Microscopy; David Cherns Conference proceedings 1989 Plenum Press, New York 198

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Strains and Misfit Dislocations at Interfaceslectron Diffraction (CBED) for the measurement of local strain, and we will describe the use of a new technique, Convergent Beam Imaging (CBIM), for detecting, mapping and measuring small crystalline distortions.

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Image Processing Applied to HRTEM Images of Interfacestunities to extract the relevant part of the information, thus simplifying the interpretation of the image. Several textbooks have appeared. which give an introduction into the subject of image processing in electron microscopy, with main applications in biology and organic materials. For these samp

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High Resolution Electron Microscopy Study of Indium Distribution in InAs/GaAs Multilayers(HRTEM) in order to determine the Indium location. X-Ray diffraction has provided the thickness and periodicity of the multilayers. The ones chosen were respectively A : 0.9 monolayer (mL) and B : 1.7 mL thick according to XR measurements. From comparison of their structure we conclude that Indium i

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Convergent Beam Electron Diffraction Studies of Defects, Strains and Composition Profiles in Semiconiconductor multilayers. It is shown that epitaxial strains in bicrystals and multilayers can be measured down to ~ 0.1% and that varying strain fields near dislocations and interfaces can be investigated with high sensitivity. It is also shown that convergent beam diffraction gives a powerful new me

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