Titlebook: Epitaxy of Semiconductors; Physics and Fabricat Udo W. Pohl Textbook 2020Latest edition Springer Nature Switzerland AG 2020 Semiconductor N

只看該作者 · 發(fā)表于 2025-3-27 21:55:35

,Elektrizit?tsleitung in Flüssigkeiten,ied growth techniques of liquid-phase epitaxy (LPE), metalorganic vapor-phase epitaxy (MOVPE), and molecular-beam epitaxy (MBE). The usually equilibrium-near LPE process is illustrated for different cooling procedures. For the growth employing MOVPE we consider properties of source precursors and pr

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Sascha Wolfer,Jan Oliver Rüdiger popular methods are treated in this chapter. . (SAG), also called . (SAE), is a widely applied technique to grow an epitaxial layer only in selected parts of a substrate; the areas are generally defined by windows cut through a mask layer. Selectivity is achieved best with the equilibrium-near grow

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https://doi.org/10.1007/978-3-030-43869-2Semiconductor Nanostructures; Materials for Optoelectronics; Semiconductor Heterostructures; Thermodyna

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