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Titlebook: Epitaxy of Semiconductors; Physics and Fabricat Udo W. Pohl Textbook 2020Latest edition Springer Nature Switzerland AG 2020 Semiconductor N

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發(fā)表于 2025-3-21 17:51:57 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書目名稱Epitaxy of Semiconductors
副標(biāo)題Physics and Fabricat
編輯Udo W. Pohl
視頻videohttp://file.papertrans.cn/314/313367/313367.mp4
概述Provides the essentials for a comprehensive graduate course on crystal growth of semiconductor heterostructures.Covers thermodynamics and kinetics of layer growth and major growth techniques.Contains
叢書名稱Graduate Texts in Physics
圖書封面Titlebook: Epitaxy of Semiconductors; Physics and Fabricat Udo W. Pohl Textbook 2020Latest edition Springer Nature Switzerland AG 2020 Semiconductor N
描述.The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today’s advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations.?In this second edition, many topics have
出版日期Textbook 2020Latest edition
關(guān)鍵詞Semiconductor Nanostructures; Materials for Optoelectronics; Semiconductor Heterostructures; Thermodyna
版次2
doihttps://doi.org/10.1007/978-3-030-43869-2
isbn_softcover978-3-030-43871-5
isbn_ebook978-3-030-43869-2Series ISSN 1868-4513 Series E-ISSN 1868-4521
issn_series 1868-4513
copyrightSpringer Nature Switzerland AG 2020
The information of publication is updating

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https://doi.org/10.1007/978-981-16-5297-4defects in organic crystals. Polymers consist of long chain-like molecules packed largely uniformly in lamella of crystalline domains, which are separated by amorphous regions with tangled polymer chains. Crystallinity usually increases with the molecular length, get maximum at a critical molecular
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https://doi.org/10.1007/978-3-658-01493-3t the interfaces between two organic semiconductors have often weak interaction, yielding a band alignment largely described by matching the vacuum levels. Molecular interaction at interfaces to metals is generally strong, creating surface dipoles and an often observed pinning of the Fermi level.
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https://doi.org/10.1007/978-3-658-11233-2es, and the diffracted electron and X-ray beams disclose the surface morphology and reconstructions. Optical probes are widely applied in gaseous growth ambient. The selectivity for the surface may strongly be enhanced by taking advantages of symmetry-related surface properties, and several optical
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Electronic Properties of Organic Semiconductors,t the interfaces between two organic semiconductors have often weak interaction, yielding a band alignment largely described by matching the vacuum levels. Molecular interaction at interfaces to metals is generally strong, creating surface dipoles and an often observed pinning of the Fermi level.
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發(fā)表于 2025-3-23 08:30:33 | 只看該作者
In Situ Growth Analysis,es, and the diffracted electron and X-ray beams disclose the surface morphology and reconstructions. Optical probes are widely applied in gaseous growth ambient. The selectivity for the surface may strongly be enhanced by taking advantages of symmetry-related surface properties, and several optical
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