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Titlebook: Emerging Non-volatile Memory Technologies; Physics, Engineering Wen Siang Lew,Gerard Joseph Lim,Putu Andhita Danan Book 2021 The Editor(s)

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樓主: Opiate
41#
發(fā)表于 2025-3-28 16:55:58 | 只看該作者
Chiral Magnetic Domain Wall and Skyrmion Memory Devicesain wall motion. The exact physics behind the SOTs is still not well known, but it was well demonstrated that the SOTs show higher efficiency for domain wall (DW) motion. However, this SOT requires additionally a chiral symmetry breaking such as due to DMI in order to act on the DWs. The DMI generat
42#
發(fā)表于 2025-3-28 22:41:35 | 只看該作者
43#
發(fā)表于 2025-3-28 23:21:05 | 只看該作者
44#
發(fā)表于 2025-3-29 04:34:20 | 只看該作者
RRAM Device Characterizations and Modelling transmission electron microscopy (TEM) and so on. After that, Monte Carlo simulation of the dynamic resistive switching processes is presented, allowing for correlating the observed switching characteristics with the microcosmic physical processes. Besides, compact model for spice simulation of RRA
45#
發(fā)表于 2025-3-29 09:23:52 | 只看該作者
46#
發(fā)表于 2025-3-29 15:24:11 | 只看該作者
state-of-the-art applications of memory technologiesThis book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based
47#
發(fā)表于 2025-3-29 15:44:42 | 只看該作者
48#
發(fā)表于 2025-3-29 20:54:44 | 只看該作者
https://doi.org/10.1007/978-3-030-46855-2communication applications is discussed, with the focus on the synchronization and modulation of the MTJ-STNOs with an external signal. Finally the application of these devices as microwave detectors is discussed, and we concentrate on approaches for enhancing their microwave sensitivity.
49#
發(fā)表于 2025-3-30 02:56:46 | 只看該作者
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