Titlebook: Emerging Non-volatile Memory Technologies; Physics, Engineering Wen Siang Lew,Gerard Joseph Lim,Putu Andhita Danan Book 2021 The Editor(s)

正式演說

RRAM Device Characterizations and Modellingbeen carried out to facilitate practical use of RRAM as data storage system. However, further improvements, such as reducing the operation voltage and current, suppressing the device variability, etc., are still needed for the commercialization of RRAM. To further optimize the device performance, ph

Gossamer

RRAM-Based Neuromorphic Computing Systemsdata generated across the globe as well as various emerging hardware requirements to execute complex tasks, e.g., pattern recognition, speech classification, etc. Neuromorphic computing has emerged as one of the most extensively investigated among these approaches. RRAM devices with their desired ch

Arable

An Automatic Sound Classification Framework with Non-volatile Memoryautomatic sound classification (ASC) systems has improved significantly in recent years. However, the high computational cost, hence high power consumption, remains a major hurdle for large-scale implementation of ASC systems on mobile and wearable devices. Motivated by the observations that humans

Judicious

Wen Siang Lew,Gerard Joseph Lim,Putu Andhita DananOffers a comprehensive guide to non-volatile magnetic memory devices.Written by prominent experts from both academia and industry.Highlights state-of-the-art applications of memory technologies

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https://doi.org/10.1007/978-3-030-46855-2rowave generator, and also as a microwave detector, by using the concept of spin-transfer torque. When the MTJ nanopillar is used as a microwave generator, the device is known as a spin-torque nano-oscillator (STNO) and offers advantages of high output power over metallic-based STNOs. We first discu

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多產(chǎn)魚

易碎

https://doi.org/10.1007/978-3-031-58791-7eration memory device. This approach has many technological appeals as it can enable ultra-low-latency data transfer and ultra-low power electronics. The underlying mechanisms governing magnetization switching from an applied electric-field are interfacial spin-charge coupling and Larmor precession.

天然熱噴泉