Titlebook: Electronic Structure of Semiconductor Heterojunctions; Giorgio Margaritondo Book 1988 Editoriale Jaca Book spa, Milano 1988 electron.elect

西瓜

Heterojunctions: Definite breakdown of the electron affinity rulel to predict semiconductor-semiconductor band lineups. The results show, beyond any experimental uncertainty, that the rule is incorrect. The elimination of the rule and of all models related to it considerably simplifies the theoretical situation of this fundamental area of solid-state physics.

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Parabolic quantum wells with the GaAs-Al,Ga,As systemreflect harmonic oscillator-like electron and hole levels. The many observed heavy-hole transitions can be fitted accurately with a model that divides the energy-gap discontinuity Δ.. equally between the conduction and valence-band wells. This is in marked contrast to the usual Δ.. = 0.85Δ.. and Δ..

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978-90-277-2823-4Editoriale Jaca Book spa, Milano 1988

WAX

平息

0923-1749 Overview: 978-90-277-2823-4978-94-009-3073-5Series ISSN 0923-1749

ANA

Perspectives in Condensed Matter Physicshttp://image.papertrans.cn/e/image/306426.jpg

essential-fats

,Gesundheit und Innovation – Grundlagen,Following the past seventeen-year developmental path in the research of semiconductor superlattices and quantum wells, significant milestones are presented with emphasis on experimental investigations in the device physics of reduced dimensionality performed in cooperation with the materials science of heteroepitaxial growth.

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充滿人

A Bird’s-Eye View on the Evolution of Semiconductor Superlattices and Quantum WellsFollowing the past seventeen-year developmental path in the research of semiconductor superlattices and quantum wells, significant milestones are presented with emphasis on experimental investigations in the device physics of reduced dimensionality performed in cooperation with the materials science of heteroepitaxial growth.

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Angle-resolved photoemission measurements of band discontinuities in the GaAs-Ge heterojunctionThe conduction- and valence-band discontinuities for the (110) GaAs-Ge heterojunction have been measured as Δ.. = 0.50 eV and Δ.. = 0.25 e. by the angle-resolved ultraviolet photoemission (ARUPS) technique. These values are in good agreement with the theoretical predictions of Pickett ..