Titlebook: Electronic Structure of Semiconductor Heterojunctions; Giorgio Margaritondo Book 1988 Editoriale Jaca Book spa, Milano 1988 electron.elect

海市蜃樓

書(shū)目名稱(chēng)Electronic Structure of Semiconductor Heterojunctions影響因子(影響力)




書(shū)目名稱(chēng)Electronic Structure of Semiconductor Heterojunctions影響因子(影響力)學(xué)科排名




書(shū)目名稱(chēng)Electronic Structure of Semiconductor Heterojunctions網(wǎng)絡(luò)公開(kāi)度




書(shū)目名稱(chēng)Electronic Structure of Semiconductor Heterojunctions網(wǎng)絡(luò)公開(kāi)度學(xué)科排名




書(shū)目名稱(chēng)Electronic Structure of Semiconductor Heterojunctions被引頻次




書(shū)目名稱(chēng)Electronic Structure of Semiconductor Heterojunctions被引頻次學(xué)科排名




書(shū)目名稱(chēng)Electronic Structure of Semiconductor Heterojunctions年度引用




書(shū)目名稱(chēng)Electronic Structure of Semiconductor Heterojunctions年度引用學(xué)科排名




書(shū)目名稱(chēng)Electronic Structure of Semiconductor Heterojunctions讀者反饋




書(shū)目名稱(chēng)Electronic Structure of Semiconductor Heterojunctions讀者反饋學(xué)科排名

兇殘

商店街

強(qiáng)壯

桶去微染

團(tuán)結(jié)

團(tuán)結(jié)

entreat

Schottky barriers: An effective work function modelgold is found to correlate well with the anion work function, suggesting the interface phases are often anion rich. This correlation holds even for cases in which the “common anion rule” fails, and explains both successes and failures of this earlier model.

debase

Parabolic quantum wells with the GaAs-Al,Ga,As system = 0.15Δ.. generally assumed for square wells. Experiment and theory show that parabolic wells can lead to parity-allowed Δ. = 2 (“forbidden”) transitions with strengths greater than Of nearby Δ. = 0(“allowed”) transitions.

travail

Growth of Microstructures by Molecular Beam Epitaxyric fields may be applied, new structures with enhanced carrier mobilities, structures for tunneling injection of carriers, and possible structures for achievement of quantum wires and dots. New crystal systems and new growth techniques are extending the range of accessible microstructures.