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Titlebook: Electronic Structure and Optical Properties of Semiconductors; Marvin L. Cohen,James R. Chelikowsky Textbook 19881st edition Springer-Verl

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樓主: Johnson
51#
發(fā)表于 2025-3-30 08:38:21 | 只看該作者
Diamond and Zinc-Blende Structure Semiconductors,lichés are often trivializing in nature, the comparison here is not. The amount of data for silicon is immense; almost every conceivable probe has been applied to silicon with a concurrent analysis of theoretical predictions. Most of the theoretical results given in this chapter are from [8.1].
52#
發(fā)表于 2025-3-30 12:31:39 | 只看該作者
Introduction: A Systemic View of Innovationmum) band gap. Semiconductors are assumed to have band gaps from 0 to ~4eV, insulators >4eV, and semimetals ≤0. Gray Sn (α-Sn) is an example of a borderline material which has zero band gap. It has been called a zero-gap semiconductor; it has also been called in ideal semimetal.
53#
發(fā)表于 2025-3-30 17:33:57 | 只看該作者
Alexander Chursin,Yuri Vlasov,Yury Makarov is the same, a given volume of reciprocal space for wurtzite contains approximately twice as many reciprocal lattice points. The lattice constants for several wurtzite structure semiconductors are given in Table 9.1.
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