Titlebook: Electronic Structure and Optical Properties of Semiconductors; Marvin L. Cohen,James R. Chelikowsky Textbook 19881st edition Springer-Verl

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Interregnum

Response Functions and Density of States,compared with calculated density of states curves. The details and methods regarding the use of the measured spectra, will be discussed elsewhere in this volume. Here we describe the theoretical calculations of the response functions.

燕麥

High Energy Probes of Semiconductors: X-Rays,function of x-rays is to probe the valence charge density of a semiconductor. The experimental determination of valence charge densities is difficult but not impossible, and some very good data exist for diamond and zinc-blende semiconductors. Finally, x-rays can be used to monitor temperature effects by studying Debye-Waller factors.

ALOFT

,IV–VI Semiconductors, temperature dependence of the energy gaps, the energy positions of impurity levels, the high doping levels found, the static dielectric constants, and the electronic structure of some of the alloys of these compounds appear to be anomalous compared to the “conventional behavior” of the diamond and zinc-blende semiconductors.

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教義

Freedom of Contract and New Economic Modelslichés are often trivializing in nature, the comparison here is not. The amount of data for silicon is immense; almost every conceivable probe has been applied to silicon with a concurrent analysis of theoretical predictions. Most of the theoretical results given in this chapter are from [8.1].

PAC

Optical and Electronic Spectra of Semiconductors,elatively easy to perform: the ratio of the incident photon flux to the reflected photon flux is measured as a function of photon energy. In principle, the only tools required for this procedure are the sample, a light source, a monochrometer, and a detector.