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Titlebook: Electromigration Inside Logic Cells; Modeling, Analyzing Gracieli Posser,Sachin S. Sapatnekar,Ricardo Reis Book 2017 Springer Internationa

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書目名稱Electromigration Inside Logic Cells
副標題Modeling, Analyzing
編輯Gracieli Posser,Sachin S. Sapatnekar,Ricardo Reis
視頻videohttp://file.papertrans.cn/307/306076/306076.mp4
概述Provides a comprehensive overview of signal electromigration analysis and modeling within logic cells, along with mitigation methodologies.Presents an algorithm to optimize the lifetime of circuits by
圖書封面Titlebook: Electromigration Inside Logic Cells; Modeling, Analyzing  Gracieli Posser,Sachin S. Sapatnekar,Ricardo Reis Book 2017 Springer Internationa
描述.This book describes new and effective methodologies for modeling, analyzing and mitigating cell-internal signal electromigration in nanoCMOS, with significant circuit lifetime improvements and no impact on performance, area and power. The authors are the first to analyze and propose a solution for the electromigration effects inside logic cells of a circuit. They show in this book that an interconnect inside a cell can fail reducing considerably the circuit lifetime and they demonstrate a methodology to optimize the lifetime of circuits, by placing the output, Vdd and Vss pin of the cells in the less critical regions, where the electromigration effects are reduced. Readers will be enabled to apply this methodology only for the critical cells in the circuit, avoiding impact in the circuit delay, area and performance, thus increasing the lifetime of the circuit without loss in other characteristics.?.
出版日期Book 2017
關鍵詞Circuit reliability; Electromigration Techniques; Electromigration Modeling; cell-internal signal elect
版次1
doihttps://doi.org/10.1007/978-3-319-48899-8
isbn_softcover978-3-319-84041-3
isbn_ebook978-3-319-48899-8
copyrightSpringer International Publishing AG 2017
The information of publication is updating

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Unterhaltende Handfertigkeiten,rom the NANGATE 45?nm cell library down to 22?nm. While this may not strictly obey all design rules at a 22?nm node, the transistor and wire sizes are comparable to 22?nm libraries, and so are the currents. The layout parasitic extraction was done using the 45?nm FreePDK (FreePDK45?.) models and the Calibre xRC (Mentor?.) tool.
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https://doi.org/10.1007/978-981-19-6095-6apter the EM effects on these nets are analyzed for six different metal layers and three different wire lengths, 100, 200, and 300?μm in 22?nm technology. The layouts are constructed considering the 45?nm technology and scaled to 22?nm technology.
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