Titlebook: Electroluminescence; Proceedings of the F Shigeo Shionoya,Hiroshi Kobayashi Conference proceedings 19891st edition Springer-Verlag Berlin H

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Influence of the Mn Concentration and the Level of Excitation on Efficiency of ZnS:Mn DevicesSeveral papers dealing with the mechanism of ZnS:Mn. emission in TFEL devices have been reported and two principal phenomena which govern the decay of the yellow Mn. emission have been registered [ 1,2,3 ] :

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Auger Effect in Semiconductors: Why Does It Matter for Electroluminescence?the Auger effect. This review summarizes a current status of the experiment and theory of the Auger effect and its relationship to the quantum efficiency of high-field electroluminescence. Mechanisms (electric-dipole versus exchange) governing the Auger-type energy transfer processes are discussed.

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Time Resolved Emission Spectra in ZnS Thin Film Electroluminescent Devicescessfully interpreted on the basis of a direct impact excitation model. However, a resonant energy transfer model as a dominant excitation process has been presented.. There are only a few reports on studies of the relation between broad-band emission intrinsic to ZnS host and emission of doped ion.

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Excitation Mechanism Based on Field-Induced Delocalization of Luminescent Centers in CaS:Eu2+ and Srtion, because they are promising candidates for full-color TFEL display panels [1–3], Very recently, several experimental investigation on EL excitation mechanism of these TFEL devices have been reported [4–7], From experimental data, it is argued that the EL excitation mechanism of Eu or Ce doped C