Titlebook: Electroluminescence; Proceedings of the F Shigeo Shionoya,Hiroshi Kobayashi Conference proceedings 19891st edition Springer-Verlag Berlin H

諄諄教誨

生來(lái)

https://doi.org/10.1007/978-3-540-48924-5tion, because they are promising candidates for full-color TFEL display panels [1–3], Very recently, several experimental investigation on EL excitation mechanism of these TFEL devices have been reported [4–7], From experimental data, it is argued that the EL excitation mechanism of Eu or Ce doped C

慢慢流出

Eckhart Doege,Bernd-Arno Behrensi- and full-color thin film EL displays. Very recently, we have developed two types of bright white-light emitting thin film EL devices with new phosphors, SrS:Pr,K and SrS:Ce,K,Eu [1–3], White-light EL devices have the following important characteristics; White-light EL displays with a reverse mode

Hdl348

Ophthalmologist

Arthur P.J. Mol,Gert Spaargarenat excite luminescent centers are injected into the ZnS emitting layer from Si as a result of the band bending in Si at the interface between SiO. and p-Si. When the device was prepared on a p-layer formed by ion implantation of a n-type Si wafer, the driving voltage for electroluminescence became l

slipped-disk

Mariana Madruga de Brito,Jan Sodogedependences of the EL light output (emission waveforms). Under steady-state ac drive, differences in phosphor materials are exhibited not only by different emission decay times, but also by the number of emission peaks per period. Specifically under bipolar square pulse drive, ZnS:Mn devices normall

Prologue

Handbuch Unternehmenskommunikationctive layer as well as in the active layer-insulating layer interfaces [1]. Carriers trapped in these levels generate polarized charges and the memory function of a ZnS:Mn EL display is considered to be caused by these polarized charges [2]. Therefore, identification of these trap levels is necessar

固定某物

https://doi.org/10.1007/978-3-8349-4543-3aracteristics. The deviation of composition and a quantity of isolated Mn. ions before and after the annealing have been investigated in ZnS:Mn thin film. Especially, it is clarified by electron spin resonance analysis that annealing increased isolated Mn. ions, which contributed electroluminescense

可憎

https://doi.org/10.1007/978-3-642-93430-8crystal; development; diodes; electroluminescence; electron; exciton; material; semiconductor; thin films

narcissism

978-3-642-93432-2Springer-Verlag Berlin Heidelberg 1989