Titlebook: Electrical Characterization of Silicon-on-Insulator Materials and Devices; Sorin Cristoloveanu,Sheng S. Li Book 1995 Springer Science+Busi

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CLAP

The Springer International Series in Engineering and Computer Sciencehttp://image.papertrans.cn/e/image/305702.jpg

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SEMI

emission

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Grundlagen der betrieblichen Lohnfindungd buried oxide, and other electrical and physical properties (carrier lifetime, interface trapping, etc.) of the starting wafers prior to the fabrication of SOI devices and circuits. Fluctuations in quality and uniformity of SOI materials have great impact on the performance, yield, and reliability

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overture

https://doi.org/10.1007/978-3-8348-9927-9aces and in the buried oxide of the SOI material by using its inherent silicon—insulator—silicon (SIS) capacitor structure. The techniques include small-signal a.c. capacitance and conductance as well as transient capacitance methods.[.,.] The capacitance and conductance methods consist of low-frequ

Factorable

Verkettete Codes und iterative Decodierung a SOI substrate. SOI diodes have either vertical or lateral configuration (Fig. 7.1). Vertical diodes are fabricated on thick epitaxial films and behave like bulk-silicon diodes except that the material properties may be quite different. Thin lateral diodes are more typical SOI devices. The forward

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