Titlebook: Dilute III-V Nitride Semiconductors and Material Systems; Physics and Technolo Ay?e Erol (Faculty of Science) Book 2008 Springer-Verlag Ber

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The Hall Mobility in Dilute Nitrides, scattering from nitrogen sites and clusters, the conduction band becomes highly non-parabolic, which further affects the transport properties. The effect of this non-parabolicity on the mobility can be dealt with using an extension to the ladder method for solving Boltzmann‘s transport equation. Th

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Doping, Electrical Properties and Solar Cell Application of GaInNAs,n multijunction solar cells. Minority carrier devices are sensitive to carrier localization and trapping. Hence, in a complex material system like GaInNAs results of transport, optical and structural properties should be interpreted together to obtain a picture of the intrinsic and the growth-relate

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Elemental Devices and Circuits for Monolithic Optoelectronic-Integrated Circuit Fabricated in Disloemiconductor field effect transistors were merged in a single chip. Structural defect-free GaPN and InGaPN layers were grown on a Si substrate. Point defects in these layers were reduced by reducing N ions and rapid thermal annealing. The carrier concentrations of the GaPN layer were controlled by d

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