Titlebook: Dilute III-V Nitride Semiconductors and Material Systems; Physics and Technolo Ay?e Erol (Faculty of Science) Book 2008 Springer-Verlag Ber

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Jiadong Zheng,Patricia Peill-Schoellerrange of electronic and optoelectronic applications. However, the addition of nitrogen also has a large impact on the carrier dynamics, often resulting in a considerable increase in shallow traps, which readily capture excitons. A number of mechanisms have been proposed to explain the creation of sh

Felicitous

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Patricia Peill-Schoeller,Pengcheng Li scattering from nitrogen sites and clusters, the conduction band becomes highly non-parabolic, which further affects the transport properties. The effect of this non-parabolicity on the mobility can be dealt with using an extension to the ladder method for solving Boltzmann‘s transport equation. Th

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Sozialkapital und Transaktions-Controllingn multijunction solar cells. Minority carrier devices are sensitive to carrier localization and trapping. Hence, in a complex material system like GaInNAs results of transport, optical and structural properties should be interpreted together to obtain a picture of the intrinsic and the growth-relate

ANTI

Sandro Bliemetsrieder,Susanne Dungsemiconductor field effect transistors were merged in a single chip. Structural defect-free GaPN and InGaPN layers were grown on a Si substrate. Point defects in these layers were reduced by reducing N ions and rapid thermal annealing. The carrier concentrations of the GaPN layer were controlled by d