Titlebook: Defects and Impurities in Silicon Materials; An Introduction to A Yutaka Yoshida,Guido Langouche Book 2015 Springer Japan 2015 Atomistic In

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可耕種

Cardiac

AMPLE

Oxygen Precipitation in Silicon,pitates are described from the viewpoint of classical nucleation theory. The initial states of oxygen precipitation as suggested by ab initio calculation are also shown. Results about the impact of intrinsic point defects, doping, and co-doping on oxygen precipitation are presented. The most importa

AMPLE

Defect Characterization in Silicon by Electron-Beam-Induced Current and Cathodoluminescence Techniqharacterization of extended defects in Si. For these purposes, we use a scanning electron microscope (SEM) for electron beam irradiation. The electric current induced at the internal circuit and light emission from the specimen are used for the imaging of EBIC and CL, respectively. Using these techn

世俗

Nuclear Methods to Study Defects and Impurities in Si Materials,tomic and electronic configuration of this atom. In the field of defects and impurities in semiconductors, the study of their hyperfine interaction can therefore contribute substantially to their identification and characterization. The introduction of radioactive isotopes as impurity atoms allows t

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