Titlebook: Compound Semiconductors Strained Layers and Devices; S. Jain,M. Willander,R. Overstraeten Book 2000 Springer Science+Business Media New Yo

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Strain and critical thickness,Consider an epilayer of a semiconductor with lattice constant .} grown on a thick substrate with lattice constant .} (illustrated in Fig. 3.1). The lattice mismatch is measured by the misfit parameter .} defined below [3, 235]

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Sickenversteifte Blechkonstruktionen, extensively used methods are electron microscopy, X-ray diffraction and rocking curves, reflection high energy electron diffraction (RHEED), and optical methods. Recently micro-Raman and magnetic methods have also been used. Micro-Raman method has been reviewed by us recently [52, 141, 142]. We dis

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Bewertung von OEE-Verbesserungen,ily than .}-type. Theoretical work shows that Al and Ga form stable deep centers in most II-VI semiconductors, similar to .} centers in AlGaAs. Chlorine is an effective n-type dopant in ZnSe, and wider bandgap ZnMgSSe alloy[405, and references given there in] and BeMgZnSe alloy [406]–[408]. Chlorine

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Bewertung von OEE-Verbesserungen,d can not be suppressed by improving the quality and purity of the sample. Early predictions that strain can suppress the Auger recombination and reduce the threshold current were made by Yablonovitch and Kane [51]. In the following years strain played an important role in improving the performance

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