Titlebook: Compound Semiconductors Strained Layers and Devices; S. Jain,M. Willander,R. Overstraeten Book 2000 Springer Science+Business Media New Yo

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書目名稱Compound Semiconductors Strained Layers and Devices影響因子(影響力)




書目名稱Compound Semiconductors Strained Layers and Devices影響因子(影響力)學(xué)科排名




書目名稱Compound Semiconductors Strained Layers and Devices網(wǎng)絡(luò)公開度




書目名稱Compound Semiconductors Strained Layers and Devices網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Compound Semiconductors Strained Layers and Devices被引頻次




書目名稱Compound Semiconductors Strained Layers and Devices被引頻次學(xué)科排名




書目名稱Compound Semiconductors Strained Layers and Devices年度引用




書目名稱Compound Semiconductors Strained Layers and Devices年度引用學(xué)科排名




書目名稱Compound Semiconductors Strained Layers and Devices讀者反饋




書目名稱Compound Semiconductors Strained Layers and Devices讀者反饋學(xué)科排名

搬運(yùn)工

Measured

Brocas-Area

巧思

Strain relaxation and defects,for several cases in this chapter. Strain relaxation has been measured using a very large number of techniques. Many different semiconductor heterostructures have been investigated. Additional measurements of strain are discussed along with the optical properties in .

nitric-oxide

Summary and conclusions,GaAs, AlxGa1–xAs/GaAs, InP/InP and Ga047In0.53As/InP using both the hydrogen and the nitrogen as the carrier gases. For GaAs and InP the crystal quality and purity of the epilayers grown in nitrogen was comparable to those of the epilayers grown in hydrogen.

nitric-oxide

Overview: 978-1-4613-7000-0978-1-4615-4441-8

Ovulation

Electronic Materials Serieshttp://image.papertrans.cn/c/image/231861.jpg

欺騙世家

Thyroiditis

https://doi.org/10.1007/978-3-658-15423-3Band structure of unstrained zinc blende semiconductors is shown schematically in Fig. 5.1(a). A semiconductor layer grown on a substrate of different material is generally strained. The strain is biaxial. We discuss the modification in the bandstructure caused by the strain in this section.