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Titlebook: Compact Modeling; Principles, Techniqu Gennady Gildenblat Book 2010 Springer Science+Business Media B.V. 2010 BJT.Compact models.Leistungsf

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51#
發(fā)表于 2025-3-30 11:23:00 | 只看該作者
Soziale Differenz und Reifizierungeveloped by the Arizona State University and NXP Semiconductors. The emphasis is on the interplay between the mathematical structure of the compact model and its capabilities for the circuit design applications.
52#
發(fā)表于 2025-3-30 14:05:39 | 只看該作者
53#
發(fā)表于 2025-3-30 19:20:52 | 只看該作者
Drei Kritiken am Klassenbegriff,exhibit qualitatively correct physical behavior for drain current, terminal charges, noise, and all derivatives. Physics-based models may automatically embody the correct physical behavior for long-channel devices, but compact models of scaled transistors inevitably involve approximations that can i
54#
發(fā)表于 2025-3-30 23:54:38 | 只看該作者
55#
發(fā)表于 2025-3-31 04:11:27 | 只看該作者
https://doi.org/10.1007/978-3-531-93143-2ic fluctuations which are inherent in the device structure and extrinsic fluctuations that are subject to optimization and elimination. While most noise sources are well understood, excess channel noise and 1/. noise continue to be areas of active research.
56#
發(fā)表于 2025-3-31 05:23:36 | 只看該作者
57#
發(fā)表于 2025-3-31 12:08:47 | 只看該作者
Thomas Schwinn,Clemens Kroneberg,Jens Greve the model. Mextram has been developed to capture all terminal characteristics of bipolar transistors that are relevant to industrial electronic circuit design of any Si or SiGe bipolar transistor, under all relevant practical circumstances. History, basic structure and features of the model are dis
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