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Titlebook: Compact Modeling; Principles, Techniqu Gennady Gildenblat Book 2010 Springer Science+Business Media B.V. 2010 BJT.Compact models.Leistungsf

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書目名稱Compact Modeling
副標(biāo)題Principles, Techniqu
編輯Gennady Gildenblat
視頻videohttp://file.papertrans.cn/231/230786/230786.mp4
概述A comprehensive book on compact models of most commonly used semiconductor devices.Each chapter is covered by an expert, often responsible for the widely used model with wide industrial applications.B
圖書封面Titlebook: Compact Modeling; Principles, Techniqu Gennady Gildenblat Book 2010 Springer Science+Business Media B.V. 2010 BJT.Compact models.Leistungsf
描述Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
出版日期Book 2010
關(guān)鍵詞BJT; Compact models; Leistungsfeldeffekttransistor; MOSFET; Variability; bipolar junction transistor; bipo
版次1
doihttps://doi.org/10.1007/978-90-481-8614-3
isbn_softcover978-94-007-9324-8
isbn_ebook978-90-481-8614-3
copyrightSpringer Science+Business Media B.V. 2010
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Introduction to Bipolar Transistor Modelingon fundamental device physics and modeling; subsequent chapters give specific details of two advanced models, Mextram and HiCuM. We first give a synopsis of basic BJT device behavior and modeling, and then introduce the Gummel integral charge control relationship, which elegantly and physically enca
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Mextram the model. Mextram has been developed to capture all terminal characteristics of bipolar transistors that are relevant to industrial electronic circuit design of any Si or SiGe bipolar transistor, under all relevant practical circumstances. History, basic structure and features of the model are dis
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