Titlebook: Bias Temperature Instability for Devices and Circuits; Tibor Grasser Book 2014 Springer Science+Business Media New York 2014 Metastable De

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Bias Temperature Instability for Devices and Circuits978-1-4614-7909-3

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Statistical Study of Bias Temperature Instabilities by Means of 3D “Atomistic” Simulationthe importance of variability in reliability evaluation of nanoscale devices. In particular we analyse the impact of variability on the single transistor and on many different transistors in presence of a single trapped charge. Then we show the effects related to multiple trapped charges. Finally th

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Oratory

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Atomistic Modeling of Defects Implicated in the Bias Temperature Instabilityo be responsible for performance and reliability issues in MOS devices, particularly dielectric degradation and the bias temperature instability (BTI). Ultra-thin silicon dioxide films are present at the interface between Si and high-. oxides; thus it is hoped that understanding the defects in silic

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Statistical Study of Bias Temperature Instabilities by Means of 3D “Atomistic” Simulationtering in the nanoscale era, the statistical variability due to random dopant fluctuations plays a critical role in determining the transistor reliability performance. As a consequence, in contemporary devices, reliability and variability cannot be considered anymore as separate concepts. The reliab

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Advanced Modeling of Oxide Defectsng process is believed to be a non-radiative multiphonon (NMP) process, which is also encountered in numerous physically related problems. Therefore, the underlying NMP theory is frequently found as an important ingredient in the youngest BTI reliability models. While several different descriptions