Titlebook: Atomic Layer Deposition for Semiconductors; Choel Seong Hwang Book 2014 Springer Science+Business Media New York 2014 ALD for mass-product

CARK

敏捷

Back End of the Lineor Cu metallization, very thin and conformal deposition of diffusion barrier and seed layer is essential for good gap fill by electroplating. In this chapter, we will review the efforts on the application of ALD at BEOL process; including contact/plug formation and metallization.

星星

敵意

地名詞典

Predigest

模仿

ALD Simulationsultiscale simulations of gas flow are used to investigate conformality in high aspect ratio features and uniformity of growth within a reactor. The most popular subject for modeling is the ALD of oxides and nitrides, particularly the high-. dielectrics HfO., ZrO., and Al.O., due to their importance in semiconductor processing.

名詞

Introduction, sulfides, selenides and tellurides of some elements, and phosphides, arsenides, carbides, and fluorides of few elements. The mechanisms of ALD reactions involve the transfer of atoms between precursor vapors and surfaces. The transferred atoms are either hydrogen, oxygen, fluorine, or chlorine.

火花

ALD Precursors and Reaction Mechanisms, sulfides, selenides and tellurides of some elements, and phosphides, arsenides, carbides, and fluorides of few elements. The mechanisms of ALD reactions involve the transfer of atoms between precursor vapors and surfaces. The transferred atoms are either hydrogen, oxygen, fluorine, or chlorine.

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