Titlebook: Advances in Solid State Physics 37; Reinhard Helbig Conference proceedings 1998 Springer-Verlag Berlin Heidelberg 1998 condensed matter.co

為寵愛

同來核對(duì)

協(xié)議

Si,C, and Si,Ge,C, alloy layers on Si substrate, Si.C. layers below 180 K, which is attributed to the splitting of the Δ valleys in the conduction band. In p-type modulation doped 8 nm thick Si.Ge.C. quantum wells we observe an improved hole mobility at room temperature and 77 K compared to corresponding samples without C, which is a consequence

coagulation

neuron

Nonlinear semiconductor microcavity reflectance and photoluminescence from normal-mode coupling to e layers also shows curious density-dependent behavior. When the cavity mode is tuned energetically above the exciton resonance, the upper-polariton peak is weaker (stronger) than the lower-polariton peak at low (high) carrier densities. This crossover occurs at a carrier density less than a factor

BORE

Hanle-oscillations in the stimulated emission of microcavity laser,s with coupled microcavity lasers show a density dependent switching between two distinct oscillation frequencies. The switching turns out to be an interesting method to characterize the active gain medium in coupled microcavities.

完整

fertilizer

和平主義者

Trochlea

Fano resonances in the optical absorption of low-dimensional semiconductors,oulomb interaction. We formulate conditions for Fano interference, identify low-dimensional semiconductors in which Fano resonances should be observed, and give an overview of theoretical and experimental results. The general theory is illustrated by calculating optical spectra of quantum-well wires.