Titlebook: Advances in Rapid Thermal and Integrated Processing; Fred Roozeboom Book 1996 Springer Science+Business Media B.V. 1996 Metall.Semiconduct

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Integrated Pre-Gate Dielectric Cleaning and Surface Preparation,. interfacial region becomes a more significant part of the gate dielectric. This makes pre-gate dielectric surface preparation one of the most critical steps in integrated circuit manufacturing [1–5].

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Optimal Control Based on Fuzzy Logicemphasis in the present paper is to review the GaAs device technology, the material problems and device structures and to show that RTP has removed key material problems which were bottlenecks in achieving a fabrication process which is reliable and high yield.

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Po-Whei Huang,Cheng-Hsiung Lee,Phen-Lan Linuring 196 mm. [1]. In the course of 1995 the line width has been further reduced to 0.35 pm for the development of processors with some 5 metal levels, such as the Pentium Pro (or P6) processor, as part of a series of continuously shrinking microelectronics, which started after the first planar single transistor in 1959 [2].

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Asem Kasem,A. Ammar Ghaibeh,Hiroki Moriguchiheld in 1987, and the second in 1994. Obviously, process control for RTP is still an important issue. In the following, after a brief historical presentation, we will develop the background associated with RTP process control, together with the state-of-the-art. The specific issue of temperature measurement is presented in Chapter 3.

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Zara Laila Abdul Hadi,Thien Wan Auovercome current limitations in terms of temperature measurement and spatial temperature control, as well as satisfy increasingly tight performance specifications [2] . Accurate temperature measurements are needed to avoid wafer to wafer drift and to serve as input to lamp feedback control schemes minimizing spatial temperature variations.