Titlebook: Widegap II–VI Compounds for Opto-electronic Applications; Harry E. Ruda (Assistant Professor) Book 1992 Springer Science+Business Media Do

易發(fā)怒

量被毀壞

Photo-assisted metal-organic vapour phase epitaxy of zinc chalcogenidesloped as novel precursors, but the growth temperature must be as high as 500°C [9–12]. The photo-assisted technique, therefore, is a promising tool for reduction in growth temperature and for obtaining high-quality epilayers when using these source combinations. By this technique, selective growth o

SEEK

Carcinogenesis

寬敞

不容置疑

Self- and impurity diffusion processes in widegap II–VI materialsn a period of 10.s (e.g. growth of a multiple quantum well (MQW)) diffusivities must be ? 10. cm. s. if diffusional spread should not exceed ~ 10 ?. Over a period of a year diffusivities must be ? 10. cm. s. to contain any spread to < 10 ?.

agitate

epicondylitis

Ancestor

Widegap II–VI Compounds for Opto-electronic Applications

insurgent

Widegap II–VI Compounds for Opto-electronic Applications978-1-4615-3486-0