Titlebook: Widegap II–VI Compounds for Opto-electronic Applications; Harry E. Ruda (Assistant Professor) Book 1992 Springer Science+Business Media Do

看法等

penance

高原

ZnSe growth by conventional molecular beam epitaxy: a review of recent progress, have significantly advanced both our understanding of the material itself as well as the MBE technology as it pertains to ZnSe epitaxial growth. The term, conventional MBE, is taken to mean epitaxial growth in which the constituent elements, in this case Zn and Se, are derived from Knudsen-style e

態(tài)學(xué)

河潭

Quantum-sized microstructures of wide bandgap II–VI semiconductorss of II–VI materials and their alloys. The renewed interest in the family of II–VI semiconductors is thus directly related to their successful epitaxial growth by molecular beam epitaxy (MBE), atomic layer epitaxy (ALE), metal–organic chemical vapour deposition (MOCVD), and metal–organic molecular b

衍生

kindred

Transmission electron microscopy of layered structures of widegap II–VI semiconductorse blue and green spectral ranges. Difficulty in obtaining both p-type and n-type conductive forms of these materials, however, has prevented progress towards the realization of such opto-electronic devices. In the past decade, new low-temperature epitaxial growth techniques represented by molecular

sulcus

Self- and impurity diffusion processes in widegap II–VI materials fundamental level the diffusion process may involve non-defect or defect mechanisms: experimental diffusivities can help to identify the type of mechanism and underpin theoretical understanding of atom movements and defects. Diffusion is important in both material and device technology through cont

Institution

Doping and conductivity in widegap II–VI compoundsI compounds and their general properties has been presented by Hartmann . in 1982 [1]. Additional reviews, focusing more on the conductivity problem and on available dopants, are for instance those by Bhargava [2, 3], Dean [4], Marfaing [5], Neumark [6], Park and Shin [7] and Pautrat . [8]. In this

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