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Titlebook: Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies; Michael Fulde Book 2010 Springer Science+

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21#
發(fā)表于 2025-3-25 03:36:42 | 只看該作者
1437-0387 assessment in multi-gate CMOS.Close link to device and tech.Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promisin
22#
發(fā)表于 2025-3-25 09:51:13 | 只看該作者
23#
發(fā)表于 2025-3-25 14:47:02 | 只看該作者
Analog Properties of Multi-Gate MOSFETs, impact of high-k dielectrics is also covered. The objective is to close the link from technology and integration aspects to analog device performance. The associated trade-offs are outlined. On device level, the reduction of short channel effects is a major advantage of fully depleted multi-gate de
24#
發(fā)表于 2025-3-25 19:50:41 | 只看該作者
25#
發(fā)表于 2025-3-25 22:02:26 | 只看該作者
26#
發(fā)表于 2025-3-26 02:23:06 | 只看該作者
Multi-Gate Tunneling FETs,look to analog design aspects beyond CMOS. Analog design considerations are derived from basic device performance, temperature and matching behavior. Although multi-gate tunneling FETs (MuGTFETs) feature low on-currents, promising analog properties and low variability regarding temperature and thres
27#
發(fā)表于 2025-3-26 06:46:31 | 只看該作者
Book 2010 concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented a
28#
發(fā)表于 2025-3-26 11:07:31 | 只看該作者
29#
發(fā)表于 2025-3-26 13:14:05 | 只看該作者
1437-0387 ulti-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies..978-94-007-3083-0978-90-481-3280-5Series ISSN 1437-0387 Series E-ISSN 2197-6643
30#
發(fā)表于 2025-3-26 17:49:20 | 只看該作者
Analog Properties of Multi-Gate MOSFETs,vices, resulting in beneficial output impedance, gain and matching behavior. Serious concerns related to high-k dielectrics are pronounced flicker noise and dynamic threshold voltage variations or hysteresis effects. A?novel model of this new hysteresis effects suitable for analog circuit simulation is derived and verified with measurements.
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