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Titlebook: VLSI-SoC: Forward-Looking Trends in IC and Systems Design; 18th IFIP WG 10.5/IE José L. Ayala,David Atienza Alonso,Ricardo Reis Conference

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樓主: 人工合成
21#
發(fā)表于 2025-3-25 04:04:09 | 只看該作者
22#
發(fā)表于 2025-3-25 09:44:55 | 只看該作者
Tri-mode Operation for Noise Reduction and Data Preservation in Low-Leakage Multi-Threshold CMOS Ci suppression during activation events. A threshold voltage tuning methodology is presented to further alleviate the mode transition noise with smaller sleep transistors in MTCMOS circuits. Alternative applications of tri-mode MTCMOS for data preservation and leakage power reduction in idle memory elements are also discussed.
23#
發(fā)表于 2025-3-25 12:46:45 | 只看該作者
Smart Camera System-on-Chip Architecture for Real-Time Brush Based Interactive Painting Systems,me. A dedicated SoC hardware implementation avoids unnecessary latency delays caused by PC based architectures, that require communication-, PC and GPU frame-buffer delays, thereby considerably enhancing the interactivity experience. The system is prototyped on an FPGA.
24#
發(fā)表于 2025-3-25 17:47:14 | 只看該作者
Conference proceedings 2012he current trend toward increasing chip integration and technology process advancements bringing about stimulating new challenges both at the physical and system-design levels, as well as in the test of theses systems.
25#
發(fā)表于 2025-3-25 23:12:13 | 只看該作者
Self-Timed Rings: A Promising Solution for Generating High-Speed High-Resolution Low-Phase Noise Cle high-speed multi-phase outputs and we suggest a design flow for designing low-phase noise self-timed ring oscillators. A test chip has been designed and fabricated in STMicroelectonics CMOS65nm technology to verify the theoretical claims and validate the simulation results.
26#
發(fā)表于 2025-3-26 02:51:20 | 只看該作者
27#
發(fā)表于 2025-3-26 07:46:22 | 只看該作者
Design and Optimization of a Digital Baseband Receiver ASIC for GSM/EDGE,esign trade-offs are highlighted to prove the efficiency of the implemented 2.5G multi-mode architecture. The ASIC in 0.13 .m CMOS technology occupies 1.0 mm. and dissipates only 1.3 mW in fastest EDGE data transmission mode.
28#
發(fā)表于 2025-3-26 10:25:39 | 只看該作者
29#
發(fā)表于 2025-3-26 15:38:53 | 只看該作者
30#
發(fā)表于 2025-3-26 18:01:41 | 只看該作者
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