Titlebook: VLSI Design and Test; 26th International S Ambika Prasad Shah,Sudeb Dasgupta,Jaynarayan Tudu Conference proceedings 2022 The Editor(s) (if

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Investigation of Traps in AlGaN/GaN HEMT Epitaxial Structure Using Conductance Method/GaN HEMT epitaxial structure. Capacitance-Voltage (C–V) and Conductance-Voltage (G–V) measurements with frequency (1?kHz – 10?MHz) and temperature (25 and 250?°C) variations have been performed on large area Schottky pad having area 150?μm.?×?150?μm.. Two different types of traps have been observed