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Titlebook: Sustainable Development through Machine Learning, AI and IoT; First International Pawan Whig,Nuno Silva,Pavika Sharma Conference proceedin

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樓主: antihistamine
31#
發(fā)表于 2025-3-26 23:41:59 | 只看該作者
32#
發(fā)表于 2025-3-27 03:37:50 | 只看該作者
y deals with the effects of emitters.This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key?aspects of?s
33#
發(fā)表于 2025-3-27 07:32:57 | 只看該作者
34#
發(fā)表于 2025-3-27 10:03:56 | 只看該作者
Nikhitha Yathiraju,Pawan Whigy deals with the effects of emitters.This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key?aspects of?s
35#
發(fā)表于 2025-3-27 15:41:44 | 只看該作者
Shama Kouser,Ibtesam Shadadi,Anant Aggarwaly deals with the effects of emitters.This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key?aspects of?s
36#
發(fā)表于 2025-3-27 19:04:16 | 只看該作者
Naved Alam,Munna Khan,Kashif I. K. Sherwaniy deals with the effects of emitters.This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key?aspects of?s
37#
發(fā)表于 2025-3-28 00:15:13 | 只看該作者
Risheek Bajaj,Puneet Khanna,Rahul Goel,Rohan Bhargavy deals with the effects of emitters.This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key?aspects of?s
38#
發(fā)表于 2025-3-28 04:11:04 | 只看該作者
Ashima Bhatnagar,Kavita Mittal wide range, about 10.?10. Ω cm, between that of metals and insulators and which at high temperatures decreases with increasing temperature. Other characteristics are light sensitivity, rectifying effects, and an extreme dependency of the properties on impurities. After reaching a basic understandin
39#
發(fā)表于 2025-3-28 06:40:10 | 只看該作者
40#
發(fā)表于 2025-3-28 10:41:35 | 只看該作者
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