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Titlebook: Sustainable Development of Multifunctional Landscapes; Katharina Helming,Hubert Wiggering Book 2003 Springer-Verlag Berlin Heidelberg 2003

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41#
發(fā)表于 2025-3-28 16:16:58 | 只看該作者
Marek Degórski cavity QED started in the weak-coupling regime [49] and then entered the strong-coupling regime, where the exciton-photon coupling constant becomes larger than the exciton and cavity photon decay rates [50>]. In a high-. semiconductor microcavity, the strong exciton-photon coupling leads to the for
42#
發(fā)表于 2025-3-28 18:53:42 | 只看該作者
Zbyněk Ul?ák,Ji?í PallThe purpose here is not only to familiarise the reader with the modes of operation but also to point out the limitations of the simple theories. Nevertheless, even with these limitations, the analytical models outlined in this chapter have played a vital role in the development of semiconductor devi
43#
發(fā)表于 2025-3-28 23:07:29 | 只看該作者
Heinrich F. J. Wohlmeyeres involved in device and electronic circuit design and develop- ment. The rapid emergence of very high speed, high density integrated circuit technology and the drive towards high speed communications has meant that extremely small-scale device structures are used in contempor- ary designs. The cha
44#
發(fā)表于 2025-3-29 05:58:05 | 只看該作者
45#
發(fā)表于 2025-3-29 08:18:27 | 只看該作者
46#
發(fā)表于 2025-3-29 12:36:51 | 只看該作者
József ángyán,Katalin Balázs,László Podmaniczky,Julianna Skutaials, scaling, heterostructures and new device concepts. Semiconductor devices have mostly relied on Si but increasingly GaAs, InGaAs and heterostructures made from Si/SiGe, GaAs/AlGaAs etc have become important. Over the last few years one of the most exciting new entries has been the nitride based
47#
發(fā)表于 2025-3-29 18:22:28 | 只看該作者
48#
發(fā)表于 2025-3-29 22:10:13 | 只看該作者
ülo Mander,Evelyn Koduvereals, scaling, heterostructures and new device concepts. Semiconductor devices have mostly relied on Si but increasingly GaAs, InGaAs and heterostructures made from Si/SiGe, GaAs/AlGaAs etc have become important. Over the last few years one of the most exciting new entries has been the nitride based
49#
發(fā)表于 2025-3-30 02:05:18 | 只看該作者
Michael Glemnitz,Angelika Wurbspidly becoming dominant such as GaN and SiGe.The Book treats.Semiconductor Device Physics and Design.?provides a fresh and unique teaching tool. Over the last decade device performances are driven by new materials, scaling, heterostructures and new device concepts. Semiconductor devices have mostly
50#
發(fā)表于 2025-3-30 06:05:11 | 只看該作者
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