Titlebook: Surface Engineering; Surface Modification Ram Kossowsky,Subhash C. Singhal Book 1984 Martinus Nijhoff Publishers, Dordrecht 1984 alloy.cera

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S. A. Dillich,R. N. Bolster,I. L. Singern. This should in principle permit the reliable and extremely precise analysis of trace compounds mainly trace elements, at levels down to the lowest natural concentrations. However, the frequently observed very high discrepancies between the analyt- ical results of different laboratories as well as

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0168-132X resulting form ion bombardment induced sputtering. Although there is an impressive number of investi- gations {1} concerned with semiconductor materials as a result of immediate applications, the most systematic investigations have been conducted with fcc metals with particular interest on single c

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Physics of Ion Implantation (Ion Cascade Processes and Physical State of the Implanted Solid)on implantation processes discussed include implantation fluence, stopping powers, ion ranges, damage energy, enhanced diffusion, ion mixing, and sputtering. The physical state of the implanted solid is then considered. Equilibrium and metastatic implanted alloy formation is reviewed and the resulting structures are discussed.

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