Titlebook: Subsecond Annealing of Advanced Materials; Annealing by Lasers, Wolfgang Skorupa,Heidemarie Schmidt Book 2014 Springer International Publis

救護車

Superconducting Gallium Implanted Germanium,hnologies like spintronics or quantum computing. Similar to ferromagnetism in diluted magnetic semiconductors it is even possible to achieve a superconducting state in heavily doped elemental semiconductors. Superconductivity in doped semiconductors is of increasing interest for both, fundamental re

JEER

Osteons

魅力

Pulsed-Laser-Induced Epitaxial Growth of Silicon for Three-Dimensional Integrated Circuits,FETs on the seeding crystalline Si wafer is not thermally damaged, the PLEG is promising for monolithic 3D integration of circuits. This paper will review our systematic studies of both simulation and experiment on the PLEG of Si aimed for fundamental understanding of the epitaxial growth and reduct

aspersion

Improvement of Performance and Cost of Functional Films Using Large Area Laser RTP,sing (RTP) is an alternative way to fulfill the cost and performance goals of the 2nd and 3rd generation of photovoltaic products and other types of thin film electronics as well. A?variety of efficient and reliable laser sources are available from UV to IR that can match the absorption characterist

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Pulsed Laser Dopant Activation for Semiconductors and Solar Cells,ature activation processes. This reduction was realized by decreasing process duration, coupled with strongly enhanced wafer heating and cooling ramps. Standard lamp technology finally achieved processes as short as a few seconds only with ramps of up to 300?K/s..The next technology step was achieve

流動性

,Formation of High-Quality μm-Order-Thick Poly-Si Films on Glass-Substrates by Flash Lamp Annealing,cursor amorphous Si (a-Si) films prepared on low-cost substrates without serious thermal damage onto the whole glass substrates, thanks to its proper annealing duration. The FLA of a-Si films can induce lateral explosive crystallization (EC), self-catalytic crystallization driven by the release of l

Ondines-curse

Millisecond-Range Liquid-Phase Processing of Silicon-Based Hetero-nanostructures,MOS devices below 16?nm will need to solve some of the practical limits caused by one of the integration issues, such as chip performance, cost of development and production, power dissipation, reliability, etc. One solution for the performance progress which can overcome the downsizing limit in sil

CULP

,Radiation Thermometry—Sources of Uncertainty During Contactless Temperature Measurement,r commercial availability, short response time, easy handling and contactless operation. However, they hold a source for considerable measurement errors. False readings are easily gained producing large errors during temperature measurement..This chapter intends to give the reader an overview on cha

seruting

Millisecond Annealing for Semiconductor Device Applications,tary metal-oxide-semiconductor (CMOS) devices. MSA provides several unique process capabilities that have been very helpful for continued scaling of CMOS. One early application was for improving carrier activation in polysilicon gate electrodes, which reduces carrier depletion effects, providing inc